Impact of Surface Treatment on Noise in PL Measurements of Silicon Vacancies in 4H-SiC Lateral PIN-Diodes

Journal:
Nano Letters
Published:
DOI:
10.1021/acs.nanolett.6c00646
Affiliations:
6
Authors:
14
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Institutions Authors Share
Fraunhofer Institute for Integrated Systems and Device Technology (IISB), Germany
8.000000
 0.57
University of Erlangen-Nuremberg (FAU), Germany
3.000000
 0.21
Intego, Germany
1.000000
 0.07
Leibniz Institute of Surface Engineering (IOM), Germany
1.000000
 0.07
University of Science and Technology of China (USTC), China
1.000000
 0.07
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