High Electron-Affinity Oxides Intercalation for p‑Type Contacts in 2D Semiconductors

Journal:

Nano Letters

Published:

2026-05-04

DOI:

10.1021/acs.nanolett.6c00759

Affiliations:

3

Authors:

10

Go to article

Institutions	Authors	Share
MOE Key Laboratory of Advanced Materials and Devices for Post-Moore Chips, USTB, China	3.333333	0.33
State Key Laboratory for Advanced Metals and Materials, USTB, China	3.333333	0.33
University of Science and Technology Beijing (USTB), China	3.333333	0.33

Interested in Macromolecular and Materials Chemistry?