Ferroelectric-Polarization-Modulated 2D Floating-Gate Memory Enabling a 106 On/Off Ratio under ±1 V Gate-Voltage Sweep

Journal:
Nano Letters
Published:
DOI:
10.1021/acs.nanolett.6c00900
Affiliations:
1
Authors:
10
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Institutions Authors Share
MOE Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement, BIT, China
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