Nanostructured h-WO3-Based Ionologic Gates with Enhanced Rectification and Transistor Functionality
- Journal:
- ACS Nano
- Published:
- Affiliations:
- 4
- Authors:
- 8
| Institutions | Authors | Share |
|---|---|---|
| TU Dresden, Germany | 0.69 | |
| Leibniz Institute for Solid State and Materials Research (IFW Dresden), Germany | 0.19 | |
| Sohag University, Egypt | 0.06 | |
| Fraunhofer Institute for Material and Beam Technology (IWS), Germany | 0.06 |