Nanostructured h-WO3-Based Ionologic Gates with Enhanced Rectification and Transistor Functionality

Journal:

ACS Nano

Published:

2025-06-10

DOI:

10.1021/acsnano.5c02035

Affiliations:

4

Authors:

8

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Institutions	Authors	Share
TU Dresden, Germany	5.500000	0.69
Leibniz Institute for Solid State and Materials Research (IFW Dresden), Germany	1.500000	0.19
Sohag University, Egypt	0.500000	0.06
Fraunhofer Institute for Material and Beam Technology (IWS), Germany	0.500000	0.06

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