Facet-Engineered Atomic Interface and On-Chip Continuous-Amplitude Modulated Recovery Enabling Ultra-High Endurance for Hafnium-Based Ferroelectric Memories

Journal:

ACS Nano

Published:

2025-08-05

DOI:

10.1021/acsnano.5c02290

Affiliations:

5

Authors:

15

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Institutions	Authors	Share
Tsinghua University, China	6.833333	0.46
Tsinghua National Laboratory for Information Science and Technology (TNList), China	6.333333	0.42
Peking University (PKU), China	1.000000	0.07
MIIT Key Laboratory for Low-dimensional Quantum Structure and Devices, BIT, China	0.500000	0.03
Tsinghua Shenzhen International Graduate School (SIGS), China	0.333333	0.02

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