Enhancing Physical Randomness in Ta2O5/HfO2 Based Memristors through Electrode Engineering for True Random Number Generation

Journal:

ACS Nano

Published:

2025-10-09

DOI:

10.1021/acsnano.5c05204

Affiliations:

4

Authors:

17

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Institutions	Authors	Share
MOE Key Laboratory of Intelligent Sensing System and Security, HUBU, China	11.000000 11.000000	0.65
Hunan University (HNU), China	3.000000	0.18
Ningbo University (NBU), China	2.000000	0.12
State Key Laboratory of Processing for Nonferrous Metal and Featured Materials, China	1.000000	0.06

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