Manipulating Charged Domain Wall Arrays in BiFeO3 Films by Asymmetric Electrical Boundary Conditions

Journal:

ACS Nano

Published:

2025-07-15

DOI:

10.1021/acsnano.5c06742

Affiliations:

6

Authors:

9

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Institutions	Authors	Share
Shenyang National Laboratory for Materials Science (SYNL), IMR CAS, China	4.500000	0.50
University of Science and Technology of China (USTC), China	2.500000	0.28
CAS Songshan Lake Materials Laboratory, China	0.833333	0.09
Hunan University of Science and Technology (HNUST), China	0.500000	0.06
Southern University of Science and Technology (SUSTech), China	0.333333	0.04
Institute of Physics (IOP), CAS, China	0.333333	0.04

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