Enhancing Gate Control and Mitigating Short Channel Effects in 20–50 nm Channel Length Amorphous Oxide Thin-Film Transistors

Journal:

ACS Nano

Published:

2025-10-23

DOI:

10.1021/acsnano.5c10260

Affiliations:

2

Authors:

5

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Institutions	Authors	Share
The University of Texas at Austin (UT Austin), United States of America (USA)	5.000000	1.00

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