Precursor Engineering of Atomic Layer Deposition for Top-Gate Insulators on Monolayer MoS2 Transistors
- Journal:
- ACS Nano
- Published:
- DOI:
- 10.1021/acsnano.5c10705
- Affiliations:
- 5
- Authors:
- 12
| Institutions | Authors | Share |
|---|---|---|
| Stanford University, United States of America (USA) | 1.00 |