Strain Engineering of a Dual-Gate Structure for Highly Flexible and Transparent MoS2 Thin-Film Transistors with Graphene Electrodes

Journal:
ACS Nano
Published:
DOI:
10.1021/acsnano.5c11691
Affiliations:
4
Authors:
12
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Institutions Authors Share
Korea Advanced Institute of Science and Technology (KAIST), South Korea
10.000000
10.000000
 0.83
Kwangwoon University, South Korea
1.000000
 0.08
Dankook University (DKU), South Korea
1.000000
 0.08
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