Mobility Overestimation in Thin-Film Transistors: Effects of Device Geometry and Fringe Currents

Journal:
ACS Nano
Published:
DOI:
10.1021/acsnano.5c11904
Affiliations:
2
Authors:
8
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Institutions Authors Share
Ulsan National Institute of Science and Technology (UNIST), South Korea
7.000000
 0.88
Institute of Science Tokyo (Science Tokyo), Japan
1.000000
 0.13
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