Spin–Orbit Torque-Assisted Voltage-Controlled Magnetization Switching for Reliable Nonvolatile Memory

Journal:

ACS Nano

Published:

2025-10-10

DOI:

10.1021/acsnano.5c12183

Affiliations:

4

Authors:

18

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Institutions	Authors	Share
University of California, Los Angeles (UCLA), United States of America (USA)	11.000000 11.000000	0.61
Industrial Technology Research Institute (ITRI), Taiwan	6.000000	0.33
Daegu Gyeongbuk Institute of Science and Technology (DGIST), South Korea	1.000000	0.06

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