Dual Engineering of Electronic and Mechanical Properties via Heterocontact–Curvature Interfaces for Ultra-Stable K-Ion Storage

Journal:

ACS Nano

Published:

2025-10-28

DOI:

10.1021/acsnano.5c13247

Affiliations:

4

Authors:

14

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Institutions	Authors	Share
Fujian Normal University (FNU), China	11.000000 11.000000	0.79
Massachusetts Institute of Technology (MIT), United States of America (USA)	1.000000	0.07
Fujian Institute of Research on the Structure of Matter (FJIRSM), CAS, China	1.000000	0.07
University of Technology Sydney (UTS), Australia	1.000000	0.07

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