Metal-Induced Oxygen Vacancy Control in InGaZnO/Hf0.5Zr0.5O2 Ferroelectric Field-Effect Transistor Arrays for Simultaneous Improvement of Memory Window and Electrical Stability

Journal:
ACS Nano
Published:
DOI:
10.1021/acsnano.5c14197
Affiliations:
1
Authors:
7
Go to article
Institutions Authors Share
Yonsei University, South Korea
7.000000
 1.00
Interested in Macromolecular and Materials Chemistry?