Highly Reliable MoS2 Flash Memory with Ultrathin TaOx Tunneling Layer Formed via Partial Oxidation of TaS2 Floating Gate

Journal:: ACS Nano
Published:: 2025-10-23
DOI:: 10.1021/acsnano.5c14262
Affiliations:: 4
Authors:: 11

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Institutions	Authors	Share
Sungkyunkwan University (SKKU), South Korea	9.000000	0.82
Chungnam National University (CNU), South Korea	2.000000	0.18

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