Defect Engineering of Ultrathin Gallium Nitride via Electric Fields for Advanced Electronic, Magnetic, and Gas Sensing Applications

Journal:
ACS Nano
Published:
DOI:
10.1021/acsnano.5c15014
Affiliations:
3
Authors:
4
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Institutions Authors Share
Nanyang Technological University (NTU), Singapore
2.000000
 0.50
Infineon Singapore, Singapore
1.500000
 0.38
Sino-Singapore International Joint Research Institute (SSIJRI), China
0.500000
 0.13
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