Defect-Engineered Reduction of the Carrier Multiplication Threshold in Monolayer WS2 to 1.6Eg

Journal:

ACS Nano

Published:

2025-11-07

DOI:

10.1021/acsnano.5c15291

Affiliations:

3

Authors:

14

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Institutions	Authors	Share
State Key Laboratory of Integrated Optoelectronics, NENU, China	11.000000 11.000000	0.79
National Center for Nanoscience and Technology (NCNST), CAS, China	1.500000	0.11
University of Chinese Academy of Sciences (UCAS), China	1.500000	0.11

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