Gate-Tunable Electron Trap Dynamics in Defect-Engineered MoS2–WSe2 Heterostructures for Broadband Photodetection

Journal:
ACS Nano
Published:
DOI:
10.1021/acsnano.5c16244
Affiliations:
3
Authors:
5
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Institutions Authors Share
Korea Advanced Institute of Science and Technology (KAIST), South Korea
4.000000
 0.80
University of Suwon (USW), South Korea
1.000000
 0.20
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