Sub-2 nm Equivalent-Oxide-Thickness Ferroelectric Transistors for Cryogenic Memory and Computing

Journal:

ACS Nano

Published:

2026-03-31

DOI:

10.1021/acsnano.5c16255

Affiliations:

8

Authors:

19

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Institutions	Authors	Share
National Tsing Hua University (NTHU), Taiwan	5.000000	0.26
Indian Institute of Technology Gandhinagar (IIT Gandhinagar), India	4.000000	0.21
National Taiwan University (NTU), Taiwan	3.000000	0.16
National Cheng Kung University (NCKU), Taiwan	3.000000	0.16
Laboratory of Analysis and Architecture of Systems (LAAS), France	2.000000	0.11
Fraunhofer Institute for Photonic Microsystems (IPMS), Germany	1.000000	0.05
Chang Gung University (CGU), Taiwan	1.000000	0.05

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