InSe Ferroelectric Field-Effect Transistor for Simultaneous Perception–Memory–Computation All-in-One Broadband Motion Detection

Journal:

ACS Nano

Published:

2025-11-13

DOI:

10.1021/acsnano.5c16269

Affiliations:

5

Authors:

11

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Institutions	Authors	Share
Shandong University (SDU), China	5.000000	0.45
Tsinghua National Laboratory for Information Science and Technology (TNList), China	3.000000	0.27
Suzhou City University, China	1.000000	0.09
State Key Laboratory of Integrated Chip and System, Fudan University, China	1.000000	0.09
University of Electronic Science and Technology of China (UESTC), China	1.000000	0.09

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