Long-Term Operational Stability of Dual-Gated ITO/HfO2 Field-Effect Transistors via Full Top-Gate Coverage: A Comprehensive Bias-Stress Mapping

Journal:
ACS Nano
Published:
DOI:
10.1021/acsnano.5c17437
Affiliations:
2
Authors:
8
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Institutions Authors Share
Southern University of Science and Technology (SUSTech), China
6.000000
 0.75
Duke University, United States of America (USA)
2.000000
 0.25
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