Moiré-Engineered Ferroelectric Transistors for Nearly Trap-Free, Low-Power, and Nonvolatile 2D Electronics

Journal:

ACS Nano

Published:

2026-03-27

DOI:

10.1021/acsnano.5c22109

Affiliations:

6

Authors:

6

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Institutions	Authors	Share
Indian Institute of Science (IISc), India	3.500000	0.58
Research Center for Electronic and Optical Materials, NIMS, Japan	1.000000	0.17
WPI International Center for Materials Nanoarchitectonics (WPI-MANA), NIMS, Japan	1.000000	0.17
National Institute of Technology Agartala (NITA), India	0.500000	0.08

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