Flexible and Fully Printed Artificial Synaptic Devices Based on h-BN-Gated Tellurene Memtransistor

Journal:
ACS Nano
Published:
DOI:
10.1021/acsnano.6c00995
Affiliations:
5
Authors:
7
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Institutions Authors Share
Ocean University of China (OUC), China
5.000000
 0.71
Qingdao Institute of Bioenergy and Bioprocess Technology (QIBEBT), CAS, China
1.000000
 0.14
Zhejiang Laboratory, China
1.000000
 0.14
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