Site-Selective Excitation of Defects Promotes Ultrafast Hot-Electron Transfer at the Semiconductor Interface

Journal:

Journal of the American Chemical Society

Published:

2026-02-10

DOI:

10.1021/jacs.5c18179

Affiliations:

6

Authors:

12

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Institutions	Authors	Share
State Key Laboratory of Chemical Reaction Dynamics, China	7.500000	0.63
Henan University (HENU), China	2.000000	0.17
Princeton University, United States of America (USA)	1.000000	0.08
Shenzhen Institute of Advanced Light Source, China	0.500000	0.04
Southern University of Science and Technology (SUSTech), China	0.500000	0.04
University of Chinese Academy of Sciences (UCAS), China	0.500000	0.04

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