1-nm-thick epitaxial AlN passivation for highly efficient flexible InGaN red micro-LEDs

Journal:
Nature Communications
Published:
DOI:
10.1038/s41467-025-60886-z
Affiliations:
2
Authors:
15
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Institutions Authors Share
Samsung Advanced Institute of Technology (SAIT), South Korea
13.000000
13.000000
 0.87
Seoul National University (SNU), South Korea
2.000000
 0.13
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