Dislocation-assisted electron and hole transport in GaN epitaxial layers

Journal:

Nature Communications

Published:

2025-07-12

DOI:

10.1038/s41467-025-61510-w

Affiliations:

7

Authors:

21

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Institutions	Authors	Share
Institute of Microelectronics (IME), CAS, China	9.000000	0.43
Peking University (PKU), China	5.000000	0.24
Dynax Semiconductor Inc., China	3.000000	0.14
Institute of Semiconductors (IOS), CAS, China	1.500000	0.07
Institute of Technological Sciences, WHU, China	1.000000	0.05
The Hong Kong University of Science and Technology (HKUST), China	1.000000	0.05
University of Cambridge, United Kingdom (UK)	0.500000	0.02

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