Hot-carrier trapping preserves high quantum yields but limits optical gain in InP-based quantum dots

Journal:

Nature Communications

Published:

2025-07-07

DOI:

10.1038/s41467-025-61511-9

Affiliations:

9

Authors:

15

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Institutions	Authors	Share
Ghent University (UGent), Belgium	5.000000	0.33
Utrecht University (UU), Netherlands	4.000000	0.27
Imperial College London (ICL), United Kingdom (UK)	3.500000	0.23
Delft University of Technology (TU Delft), Netherlands	1.500000	0.10
Leiden University, Netherlands	0.500000	0.03
University of Central Florida (UCF), United States of America (USA)	0.500000	0.03

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