2D ferroelectric narrow-bandgap semiconductor Wurtzite’ type -InSe and its silicon-compatible growth

Journal:

Nature Communications

Published:

2025-08-09

DOI:

10.1038/s41467-025-62822-7

Affiliations:

11

Authors:

20

Go to article

Institutions	Authors	Share
Shenyang National Laboratory for Materials Science (SYNL), IMR CAS, China	8.000000	0.40
University of Science and Technology of China (USTC), China	3.000000	0.15
South China Normal University (SCNU), China	2.000000	0.10
Hebei University (HBU), China	1.000000	0.05
Shandong University (SDU), China	1.000000	0.05
Prince Sultan University, Saudi Arabia	1.000000	0.05
Soochow University, China	1.000000	0.05
Shanxi University (SXU), China	1.000000	0.05
Zhejiang University (ZJU), China	1.000000	0.05
National University of Singapore (NUS), Singapore	1.000000	0.05

Interested in Macromolecular and Materials Chemistry?