Decoupling polarization and coercive field in AlScN/AlN/AlScN stack for enhanced performance in ferroelectric thin-film transistors

Journal:
Nature Communications
Published:
DOI:
10.1038/s41467-025-62904-6
Affiliations:
3
Authors:
10
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Institutions Authors Share
Seoul National University (SNU), South Korea
6.500000
 0.65
MOE Key Laboratory of Polar Materials and Devices, ECNU, China
2.000000
 0.20
Korea Institute of Science and Technology (KIST), South Korea
1.500000
 0.15
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