Wafer-scale uniform epitaxy of transferable 2D single crystals for gate-all-around nanosheet field effect transistors

Journal:

Nature Communications

Published:

2025-11-26

DOI:

10.1038/s41467-025-65641-y

Affiliations:

5

Authors:

15

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Institutions	Authors	Share
Beijing National Laboratory for Molecular Sciences (BNLMS), China	11.000000 11.000000	0.73
Suzhou Laboratory, China	1.500000	0.10
Academy for Advanced Interdisciplinary Studies (AAIS), PKU, China	1.000000	0.07
Ulsan National Institute of Science and Technology (UNIST), South Korea	1.000000	0.07
Shenzhen Institutes of Advanced Technology (SIAT), CAS, China	0.500000	0.03

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