High-density three-dimensional integration of dynamic random-access memory using vertical dual-gate IGZO TFTs

Journal:
Nature Communications
Published:
Affiliations:
4
Authors:
28
Institutions Authors Share
Institute of Microelectronics (IME), CAS, China
17.000000
17.000000
0.61
Beijing Superstring Academy of Memory Technology, China
10.000000
10.000000
0.36
University of Cambridge, United Kingdom (UK)
0.500000
0.02
Shandong University (SDU), China
0.500000
0.02