High power density gallium nitride radio frequency transistors via enhanced nucleation in heteroepitaxy

Journal:

Nature Communications

Published:

2025-12-18

DOI:

10.1038/s41467-025-67248-9

Affiliations:

6

Authors:

26

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Institutions	Authors	Share
National Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology, Xidian University, China	13.000000 13.000000	0.50
Nanjing Electronic Devices Institute (CETC55), China	5.000000	0.19
The University of Hong Kong (HKU), China	3.000000	0.12
State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, PKU, China	2.000000	0.08
Beijing Advanced Innovation Center for Integrated Circuits, China	1.500000	0.06
Peking University (PKU), China	1.500000	0.06

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