Subthreshold Schottky-barrier transistor based on monolayer molybdenum disulfide

Journal:
Nature Communications
Published:
DOI:
10.1038/s41467-025-67347-7
Affiliations:
4
Authors:
14
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Institutions Authors Share
Institute of Microelectronics (IME), CAS, China
7.000000
 0.50
University of Chinese Academy of Sciences (UCAS), China
5.000000
 0.36
Tsinghua University, China
1.000000
 0.07
University of Cambridge, United Kingdom (UK)
1.000000
 0.07
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