Intrinsically stretchable 2D MoS transistors

Journal:
Nature Communications
Published:
DOI:
10.1038/s41467-026-68504-2
Affiliations:
3
Authors:
18
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Institutions Authors Share
Samsung Advanced Institute of Technology (SAIT), South Korea
14.000000
14.000000
 0.78
Pohang University of Science and Technology (POSTECH), South Korea
4.000000
 0.22
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