3D atomic-scale metrology of strain relaxation and roughness in Gate-All-Around transistors via electron ptychography

Journal:

Nature Communications

Published:

2026-02-23

DOI:

10.1038/s41467-026-69733-1

Affiliations:

5

Authors:

6

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Institutions	Authors	Share
Cornell University, United States of America (USA)	2.000000	0.33
TSMC, Taiwan	2.000000	0.33
ASM America, Inc., United States of America (USA)	1.000000	0.17
Platform for the Accelerated Realization, Analysis, and Discovery of Interface Materials (PARADIM), United States of America (USA)	0.500000	0.08
Kavli Institute at Cornell for Nanoscale Science, United States of America (USA)	0.500000	0.08

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