Microgravity-activated high-performance van der Waals InSe ferroelectric semiconductor

Journal:

Nature Communications

Published:

2026-03-12

DOI:

10.1038/s41467-026-70520-1

Affiliations:

4

Authors:

12

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Institutions	Authors	Share
MOE Key Laboratory of Polar Materials and Devices, ECNU, China	9.500000	0.79
State Key Laboratory of Functional Crystals and Devices, China	1.500000	0.13
Shanghai Dianji University (SHDJ), China	0.500000	0.04
Shanghai Institute of Technical Physics (SITP), CAS, China	0.500000	0.04

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