Cryogenic neuromorphic circuits using gate-controlled negative differential resistance in silicon carbide

Journal:

Nature Communications

Published:

2026-03-23

DOI:

10.1038/s41467-026-70963-6

Affiliations:

5

Authors:

11

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Institutions	Authors	Share
The University of Hong Kong (HKU), China	5.000000	0.45
Virginia Polytechnic Institute and State University (Virginia Tech), United States of America (USA)	4.500000	0.41
Center for Power Electronics Systems (CPES), Virginia Tech, United States of America (USA)	1.500000	0.14

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