S-atom dislocation-induced room-temperature ferroelectricity in two-dimensional α-MnS semiconductor

Journal:
Nature Communications
Published:
DOI:
10.1038/s41467-026-71802-4
Affiliations:
4
Authors:
18
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Institutions Authors Share
Wuhan University (WHU), China
15.000000
15.000000
 0.83
MOE Key Laboratory of Artificial Micro- and Nano-structures, WHU, China
1.500000
 0.08
Suzhou University of Science and Technology, China
1.000000
 0.06
Wuhan Institute of Quantum Technology, China
0.500000
 0.03
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