Gate structuring on n-type bilayer MoS2 field-effect transistors for ultrahigh current density

Journal:

Nature Materials

Published:

2026-01-09

DOI:

10.1038/s41563-025-02452-y

Affiliations:

5

Authors:

21

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Institutions	Authors	Share
Samsung Advanced Institute of Technology (SAIT), South Korea	14.500000 14.500000	0.69
Samsung Electronics Co., Ltd., South Korea	4.000000	0.19
Georgia Institute of Technology (Georgia Tech), United States of America (USA)	1.000000	0.05
University of Southern California (USC), United States of America (USA)	1.000000	0.05
Massachusetts Institute of Technology (MIT), United States of America (USA)	0.500000	0.02

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