Quasi-non-volatile capacitorless DRAM based on ultralow-leakage edge-contact MoS2 transistors

Journal:

Nature Materials

Published:

2026-01-14

DOI:

10.1038/s41563-025-02470-w

Affiliations:

8

Authors:

33

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Institutions	Authors	Share
State Key Laboratory of Integrated Chip and System, Fudan University, China	20.833333 20.833333 20.833333	0.63
Changxin Memory Technologies, Inc., China	4.000000	0.12
Fudan University, China	3.000000	0.09
Shaoxin Laboratory, China	2.833333	0.09
Shenzhen Six Carbon Technology Co. Ltd., China	1.000000	0.03
Shanghai University (SHU), China	1.000000	0.03
Shanghai AtomIC Technology, China	0.333333	0.01

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