Charge-triggered switching mechanism in selenium selector enabling ultralow leakage current

Journal:
Nature Materials
Published:
DOI:
10.1038/s41563-026-02499-5
Affiliations:
10
Authors:
12
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Institutions Authors Share
Shanghai Institute of Microsystem and Information Technology (SIMIT), CAS, China
3.833333
 0.32
ShanghaiTech University, China
2.000000
 0.17
National Key Laboratory of Advanced Micro and Nano Manufacture Technology, China
1.333333
 0.11
Gunma University, Japan
1.000000
 0.08
State Key Laboratory of Integrated Chip and System, Fudan University, China
1.000000
 0.08
RWTH Aachen University (RWTH Aachen), Germany
1.000000
 0.08
Shanghai Synchrotron Radiation Facility (SSRF), SARI CAS, China
0.500000
 0.04
University of Cambridge, United Kingdom (UK)
0.500000
 0.04
University of Oxford, United Kingdom (UK)
0.500000
 0.04
Shanghai Jiao Tong University (SJTU), China
0.333333
 0.03
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