A nitride-based non-volatile memory enabled by electric-field-induced phase transition

Journal:

Nature Materials

Published:

2026-04-16

DOI:

10.1038/s41563-026-02565-y

Affiliations:

8

Authors:

13

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Institutions	Authors	Share
National University of Singapore (NUS), Singapore	6.166667	0.47
Zhejiang University (ZJU), China	3.000000	0.23
NUS (Suzhou) Research Institute (NUSRI), China	1.333333	0.10
State Key Laboratory of Silicon and Advanced Semiconductor Materials, ZJU, China	1.000000	0.08
Institute of Microelectronics (IME), A*STAR, Singapore	1.000000	0.08
State Key Laboratory on Integrated Optoelectronics, China	0.500000	0.04

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