Effect of hydrogen on electrical properties and defects of AlGaN/GaN HEMTs

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0248169
Affiliations:
2
Authors:
8
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Institutions Authors Share
MIIT Fifth Electronics Research Institute (China CEPREI Laboratory), China
5.000000
 0.63
Xiangtan University (XTU), China
3.000000
 0.38
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