200-period Si/Si0.8Ge0.2 superlattice structure growth and characterization for vertical stacked DRAM

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0253276
Affiliations:
2
Authors:
14
Go to article
Institutions Authors Share
Beijing Superstring Academy of Memory Technology, China
12.000000
12.000000
 0.86
Zhejiang Qiushi Chuangxin Semiconductor Equipment Co., Ltd., China
2.000000
 0.14
Interested in Materials Engineering?