Low leakage fully-vertical GaN-on-Si power MOSFETs

Journal:

Applied Physics Letters

Published:

2025-08-04

DOI:

10.1063/5.0253436

Affiliations:

3

Authors:

8

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Institutions	Authors	Share
Huawei, China	4.000000	0.50
State Key Laboratory of Crystal Materials (SKLCM), China	2.000000	0.25
Shandong University (SDU), China	2.000000	0.25

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