Enhancement of drain soft-breakdown strength to 1.1 MV/cm for hydrogen-terminated diamond MOSFETs by mitigating hydrogen-induced defects

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0255922
Affiliations:
3
Authors:
9
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Institutions Authors Share
University of Electronic Science and Technology of China (UESTC), China
6.000000
 0.67
Nanjing Electronic Devices Institute (CETC55), China
3.000000
 0.33
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