Record-high electron mobility at near pinch-off in N-polar GaN HEMT structures grown on on-axis N-polar GaN substrates by plasma-assisted molecular beam epitaxy

Journal:

Applied Physics Letters

Published:

2025-09-30

DOI:

10.1063/5.0258504

Affiliations:

3

Authors:

6

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Institutions	Authors	Share
California State University, Los Angeles (CSULA), United States of America (USA)	2.500000	0.42
University of California, Santa Barbara (UCSB), United States of America (USA)	2.500000	0.42
University of Michigan (U-M), United States of America (USA)	1.000000	0.17

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