Demonstration of a GaN-based P-channel FinFET with high current density based on multi-channel structure
- Journal:
- Applied Physics Letters
- Published:
- DOI:
- 10.1063/5.0258789
- Affiliations:
- 1
- Authors:
- 10
| Institutions | Authors | Share |
|---|---|---|
| Xidian University, China | 1.00 |