Programming optimization for alleviating relaxation effect in RRAM high-resistance state

Journal:
Applied Physics Letters
Published:
DOI:
10.1063/5.0259294
Affiliations:
3
Authors:
6
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Institutions Authors Share
Dalian University of Technology (DUT), China
3.000000
 0.50
Xiamen Industrial Technology Research Institute, China
2.500000
 0.42
Tsinghua University, China
0.500000
 0.08
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