Low-temperature-annealed Ohmic contacts to ultrathin-AlGaN/GaN heterostructures with no two-dimensional electron gas
- Journal:
- Applied Physics Letters
- Published:
- DOI:
- 10.1063/5.0260035
- Affiliations:
- 3
- Authors:
- 4
| Institutions | Authors | Share |
|---|---|---|
| Japan Advanced Institute of Science and Technology (JAIST), Japan | 0.63 | |
| Mitsubishi Electric, Japan | 0.25 | |
| Advantest Laboratories Ltd., Japan | 0.13 |